? 2003 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 500 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 500 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25 c12a i dm t c = 25 c, pulse width limited by t jm 48 a i ar t c = 25 c13a e ar t c = 25 c18mj dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 5 v/ns t j 150 c, r g = 2 ? p d t c = 25 c 140 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c weight 3g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 250 a 500 v v gs(th) v ds = v gs , i d = 2.5 ma 2 4 v i gss v gs = 20 v dc , v ds = 0 100 na i dss v ds = 0.8 ? v dss t j = 25 c 200 a v gs = 0 v t j = 125 c1ma r ds(on) v gs = 10 v, i d = i t 0.4 ? notes 1, 2 n-channel enhancement mode high dv/dt, low t rr , hdmos tm family hiperfet tm mosfet IXFC13N50 v dss = 500 v isoplus220 tm i d25 = 12 a electrically isolated back surface r ds(on) = 0.4 ? ? ? ? ? t rr 250 ns ds98756(7/03) advanced technical information features z silicon chip on direct-copper-bond substrate - high power dissipation - isolated mounting surface - 2500v electrical isolation z low drain to tab capacitance(<35pf) z low r ds (on) hdmos tm process z rugged polysilicon gate cell structure z unclamped inductive switching (uis) rated z fast intrinsic rectifier applications z dc-dc converters z battery chargers z switched-mode and resonant-mode power supplies z dc choppers z ac motor control advantages z easy assembly: no screws or isolation foils required z space savings z high power density z low collector capacitance to ground (low emi) g = gate d = drain s = source g d s isoplus 220 tm isolated back surface* see ixfh13n50 data sheet for characteristic curves
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b 1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 0; i t notes 1, 2 7.5 9.0 s c iss 2800 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 300 pf c rss 70 pf t d(on) 18 30 ns t r v gs = 10 v, v ds = 0.5 ? v dss ,2740ns t d(off) i d = 0.5 ? i d25 , r g = 4.7 ? (external) 76 100 ns t f 32 60 ns q g(on) 110 120 nc q gs v gs = 10 v, v ds = 0.5 ? v dss , i d = i t 15 25 nc q gd 40 50 nc r thjc 0.90 k/w r thck 0.30 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 13 a i sm repetitive; pulse width limited by t jm 52 a v sd i f = i s , v gs = 0 v, 1.5 v note 1 t rr t j =25 c 250 ns t j = 125 c 350 ns q rm t j =25 c 0.6 c t j = 125 c 1.25 c i rm t j =25 c9a t j = 125 c15a i f = i s -di/dt = 100 a/ s, v r = 100 v note: 1. pulse test, t 300 s, duty cycle d 2 % 2. i t test current: i t = 6.5a 3. see ixfh13n50 data sheet for characteristic curves. isoplus220 outline
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